New Delhi:
A material that could take computer generation to a new phase have been designed by Researchers including one of Indian-origin. This material is known as a magnetoelectric multiferroic with more computing power while consuming nearly 100 times less energy than what is being required at the present senario by the electronic's.
"Electronics are the fastest-growing consumer of energy worldwide," said one of the study authors, Ramamoorthy Ramesh from Lawrence Berkeley National Laboratory in the US. "Today, about five per cent of our total global energy consumption is spent on electronics, and that's projected to grow to 40-50 percent by 2030 if we continue at the current pace and if there are no major advances in the field that lead to lower energy consumption," Ramesh said.
Magnetoelectric multiferroic material combines electrical and magnetic properties at room temperature and relies on "planar rumpling."
The new material combines together the individual layers of atoms, resulting to a thin film with magnetic polarity which can be tuned from positive to negative power of electricity.
In years to come the device-makers can make use of this material to store the binary digits that underpin computing devices.
"Before this work, there was only one other room-temperature multiferroic whose magnetic properties could be controlled by electricity," said John Heron, Assistant Professor at University of Michigan who worked on the material with researchers at Cornell University.
"That electrical control is what excites electronics makers, so this is a huge step forward," Heron noted.
